Friction of Si3N4 Ball / Si3N4 Disk Sliding in Water with SiO2 Nano-particles
نویسندگان
چکیده
منابع مشابه
Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO2 and Si3N4 etching rates
In the fabrication of microstructures in SiO2 , etch selectivity of SiO2 to masking, etch stop, and underlayer materials need to be maintained at corners and inclined surfaces. The angular dependence of the SiO2-to-Si3N4 etch selectivity mechanism in a high density fluorocarbon plasma has been studied using V-groove structures. The SiO2 etch rate on 54.7° inclined surfaces is lower than on flat...
متن کاملEnhanced Leakage Control in Scaled 45nm nMOS Devices using SiO2 and Si3N4
Gate-leakage reduction is the key motivation for the replacement of SiO2 with alternative gate dielectrics. 45nm gate length scaled grooved and bulk nMOSFETs are evaluated to bring out the most compatible and power saving dielectric option using Si3N4 and SiO2 using Silvaco ATLAS device simulator. At the scaled thickness, SiO2 controls the leakage better than Si3N4, whereas at increased thickne...
متن کاملComposite infrared bolometers with Si3N4 micromesh absorbers.
We report the design and performance of 300-mK composite bolometers that use micromesh absorbers and support structures patterned from thin films of low-stress silicon nitride. The small geometrical filling factor of the micromesh absorber provides 20x reduction in heat capacity and cosmic ray cross section relative to a solid absorber with no loss in IR-absorption efficiency. The support struc...
متن کاملOptical characterisation of silicon nanocrystals embedded in SiO2/Si3N4 hybrid matrix for third generation photovoltaics
Silicon nanocrystals with an average size of approximately 4 nm dispersed in SiO2/Si3N4 hybrid matrix have been synthesised by magnetron sputtering followed by a high-temperature anneal. To gain understanding of the photon absorption and emission mechanisms of this material, several samples are characterised optically via spectroscopy and photoluminescence measurements. The values of optical ba...
متن کاملpH driven addressing of silicon nanowires onto Si3N4/SiO2 micro-patterned surfaces.
pH was used as the main driving parameter for specifically immobilizing silicon nanowires onto Si3N4 microsquares at the surface of a SiO2 substrate. Different pH values of the coating aqueous solution enabled to experimentally distribute nanowires between silicon nitride and silicon dioxide: at pH 3 nanowires were mainly anchored on Si3N4; they were evenly distributed between SiO2 and Si3N4 at...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Tribology Online
سال: 2006
ISSN: 1881-2198
DOI: 10.2474/trol.1.34